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| CMUT2907A ULTRAminiTM SURFACE MOUNT PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-523 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM surface mount package, designed for small signal general purpose and switching applications. Marking Code is FC2. UNITS V V V mA mW C C/W 60 60 5.0 600 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=125C 10 A ICEV VCE=30V, VBE=0.5V 50 nA BVCBO IC=10A 60 V BVCEO IC=10mA 60 V BVEBO IE=10A 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.4 V VCE(SAT) IC=500mA, IB=50mA 1.6 V VBE(SAT) IC=150mA, IB=15mA 1.3 V VBE(SAT) IC=500mA, IB=50mA 2.6 V hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 R0 ( 30-May 2001) Central SYMBOL fT Cob Cib ton td tr toff ts tf TM Semiconductor Corp. TEST CONDITIONS CMUT2907A ULTRAminiTM SURFACE MOUNT PNP SILICON TRANSISTOR MIN 200 8.0 30 45 10 40 100 80 30 MAX UNITS MHz pF pF ns ns ns ns ns ns ELECTRICAL CHARACTERISTICS: Continued VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MECHANICAL OUTLINE - SOT-523 BOTTOM VIEW E F A B C G 1 2 H D 3 I R1 LEAD CODE: 1) Base 2) Emitter 3) Collector R0 ( 30-May 2001) |
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